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AEGIS
SEMICONDUTORES LTDA.
A5A:1150.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 175 O C A5A:1150.14 A5A:1150.16 A5A:1150.18 A5A:1150.20 A5A:1150.22 1400 1600 1800 2000 2200 Max. VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175 C 1500 1700 1900 2100 2300
O
TJ = -40 to 0 OC 1400 1520 1710 1900 2090
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 960 125 1800 12.2 IFSM Max. Peak non-rep. surge current 12.8 kA 14.5 15.2 627 I2t Max. I2t capability 683 886 966 It
2 1/2
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial T J = 175 C, rated VRRM applied after surge. Initial T J = 175O C, no voltage applied after surge. Initial T J = 175O C, rated VRRM applied after surge.
O Initial T J = 175 C, no voltage applied after surge. O O
C C C
A
O
IF(RMS) Nom. RMS current
A
kA2s
t = 8.3 ms t = 10ms
Max. I t
2 1/2
capability
t = 8.3 ms Initial T J = 175OC, no voltage applied after surge. kA2s1/2 N.m I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
10600 900
AEGIS
SEMICONDUTORES LTDA.
A5A:1150.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.90 --------20 --------85(3.0) TO-200AB MAX. UNITS 2.11 0.8 0.809 0.427 0.396 40 0.038 0.045 0.046 0.02 --V V mW mA
O O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 3016A. O TJ = 175 C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. Rated VRRM
O O
C/W DC operation, double side C/W 180 sine wave, double side C/W 120 rectangular wave, duble side
O
O
O
C/W Mtg. Surface smooth, flat and greased. Double side. -----
g(oz.)
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120
30
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120
30
110 100
60 90 120 180 DC
110 100 0
60
90
120 180
90 0 200 400 600 800 1000 1200 1400 1600 1800
*Rectangular waveform
100 200 300 400 500 600 700 800 900 1000 1100 1200
*Sinusoidal waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1150.XX
Maximum Average Forward Power Loss
20000
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
25000
30
Maximum Average Forward Power Loss (W)
18000 16000 14000 12000 10000 8000
20000
15000
60
60
10000
90 120
90
6000 4000 2000 0 0 200 400 600 800
120 180 DC
5000
180
0 0 200 400 600 800 1000 1200 1400 1600 1800 2000
*Sinusoidal waveform
1000 1200 1400 1600 1800 2000
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop
10000
0.1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
Instantaneous Forward Current (A)
0.01
1000
125C
25C
100 0.5 1.0 1.5 2.0 2.5 3.0 3.5
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1150.XX
TO-200AB
Fig. 7 - Outline Characteristics

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